FBG04N08ASH
FBG04N08ASH
Part number:
4107-FBG04N08ASH-ND
Product_Category
Single FETs, MOSFETs
Manufacturer
EPC Space
Type
GAN FET HEMT 40
Encapsulation
Package
Bulk
RoHS:
YES
Quantity
0
Minimun: 1
multiples: 1
Quantity
Price
Total
FBG04N08ASH NEWS
Specifications
TYPEDESCRIPTION
MfrEPC Space
Seriese-GaN®
PackageBulk
Product StatusACTIVE
Package / Case4-SMD, No Lead
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Rds On (Max) @ Id, Vgs24mOhm @ 8A, 5V
Vgs(th) (Max) @ Id2.5V @ 2mA
Supplier Device Package4-SMD
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)+6V, -4V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs2.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds312 pF @ 20 V