FBG10N05ASH
FBG10N05ASH
Part number:
4107-FBG10N05ASH-ND
Product_Category
Single FETs, MOSFETs
Manufacturer
EPC Space
Type
GAN FET HEMT 10
Encapsulation
Package
Bulk
RoHS:
YES
Quantity
49
Minimun: 1
multiples: 1
Quantity
Price
Total
FBG10N05ASH NEWS
Specifications
PDF1
TYPEDESCRIPTION
MfrEPC Space
SerieseGaN®
PackageBulk
Product StatusACTIVE
Package / Case4-SMD, No Lead
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5A (Tc)
Rds On (Max) @ Id, Vgs45mOhm @ 5A, 5V
Vgs(th) (Max) @ Id2.5V @ 1.2mA
Supplier Device Package4-SMD
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)+6V, -4V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs2.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds233 pF @ 50 V