ICE60N199
ICE60N199
Part number:
5133-ICE60N199-ND
Product_Category
Single FETs, MOSFETs
Manufacturer
IceMOS Technology
Type
Superjunction M
Encapsulation
Package
Tube
RoHS:
YES
Quantity
100
Minimun: 1
multiples: 1
Quantity
Price
Total
ICE60N199 NEWS
Specifications
PDF1
TYPEDESCRIPTION
MfrIceMOS Technology
Series-
PackageTube
Product StatusACTIVE
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Rds On (Max) @ Id, Vgs199mOhm @ 10A, 10V
Power Dissipation (Max)180W (Tc)
Vgs(th) (Max) @ Id3.9V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1890 pF @ 25 V