SIHB6N80AE-GE3
SIHB6N80AE-GE3
Part number:
742-SIHB6N80AE-GE3-ND
Product_Category
Single FETs, MOSFETs
Manufacturer
Vishay / Siliconix
Type
E SERIES POWER
Encapsulation
Package
Tube
RoHS:
NO
Quantity
1040
Minimun: 1
multiples: 1
Quantity
Price
Total
SIHB6N80AE-GE3 NEWS
Specifications
PDF1
TYPEDESCRIPTION
MfrVishay / Siliconix
SeriesE
PackageTube
Product StatusACTIVE
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5A (Tc)
Rds On (Max) @ Id, Vgs950mOhm @ 2A, 10V
Power Dissipation (Max)62.5W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)800 V
Gate Charge (Qg) (Max) @ Vgs22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds422 pF @ 100 V