TP65H050WS
TP65H050WS
Part number:
TP65H050WS-ND
Product_Category
Single FETs, MOSFETs
Manufacturer
Transphorm
Type
GANFET N-CH 650
Encapsulation
Package
Tube
RoHS:
NO
Quantity
317
Minimun: 1
multiples: 1
Quantity
Price
Total
TP65H050WS NEWS
Specifications
PDF1
TYPEDESCRIPTION
MfrTransphorm
Series-
PackageTube
Product StatusACTIVE
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Cascode Gallium Nitride FET)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C34A (Tc)
Rds On (Max) @ Id, Vgs60mOhm @ 22A, 10V
Power Dissipation (Max)119W (Tc)
Vgs(th) (Max) @ Id4.8V @ 700µA
Supplier Device PackageTO-247-3
Drive Voltage (Max Rds On, Min Rds On)12V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1000 pF @ 400 V