TP65H070LSG
TP65H070LSG
Part number:
TP65H070LSG-ND
Product_Category
Single FETs, MOSFETs
Manufacturer
Transphorm
Type
GANFET N-CH 650
Encapsulation
Package
Tube
RoHS:
YES
Quantity
0
Minimun: 1
multiples: 1
Quantity
Price
Total
TP65H070LSG NEWS
Specifications
PDF1
TYPEDESCRIPTION
MfrTransphorm
SeriesTP65H070L
PackageTube
Product StatusDISCONTINUED
Package / Case3-PowerDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Cascode Gallium Nitride FET)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Rds On (Max) @ Id, Vgs85mOhm @ 16A, 10V
Power Dissipation (Max)96W (Tc)
Vgs(th) (Max) @ Id4.8V @ 700µA
Supplier Device Package3-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds600 pF @ 400 V