TP65H480G4JSGB-TR
TP65H480G4JSGB-TR
Part number:
1707-TP65H480G4JSGB-TR-ND
Product_Category
Single FETs, MOSFETs
Manufacturer
Transphorm
Type
GANFET N-CH 650
Encapsulation
Package
Tape & Reel (TR)
RoHS:
YES
Quantity
3926
Minimun: 1
multiples: 1
Quantity
Price
Total
TP65H480G4JSGB-TR NEWS
Specifications
PDF1
TYPEDESCRIPTION
MfrTransphorm
SeriesSuperGaN®
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.6A (Tc)
Rds On (Max) @ Id, Vgs560mOhm @ 3A, 6V
Power Dissipation (Max)13.2W (Tc)
Vgs(th) (Max) @ Id2.8V @ 500µA
Supplier Device Package8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)6V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds414 pF @ 400 V