TPD3215M
TPD3215M
Part number:
TPD3215M-ND
Product_Category
FET, MOSFET Arrays
Manufacturer
Transphorm
Type
GANFET 2N-CH 60
Encapsulation
Package
Bulk
RoHS:
YES
Quantity
0
Minimun: 1
multiples: 1
Quantity
Price
Total
TPD3215M NEWS
Specifications
PDF1
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TYPEDESCRIPTION
MfrTransphorm
Series-
PackageBulk
Product StatusOBSOLETE
Package / CaseModule
Mounting TypeThrough Hole
Configuration2 N-Channel (Half Bridge)
Operating Temperature-40°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
Power - Max470W
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Input Capacitance (Ciss) (Max) @ Vds2260pF @ 100V
Rds On (Max) @ Id, Vgs34mOhm @ 30A, 8V
Gate Charge (Qg) (Max) @ Vgs28nC @ 8V
Supplier Device PackageModule